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ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V DS
Gate-Source voltage, V GS
Power dissipation
10.6V
10.6V
500 mW
Operating temperature range SCL, PCL, SAL, PAL package 0 ° C to +70 ° C
Storage temperature range
Lead temperature, 10 seconds
-65 ° C to +150 ° C
+260 ° C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND TA = 25 ° C unless otherwise specified
ALD110804/ALD110904
Parameter
Gate Threshold Voltage
Offset Voltage
Symbol
VGS(th)
VOS
Min
0.38
Typ
0.40
2
Max
0.42
10
Unit
V
mV
Test Conditions
IDS = 1 μ A, VDS = 0.1V
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
TCVOS
TCVGS(th)
5
-1.7
μ V/ ° C
mV/ ° C
VDS1 = VDS2
ID = 1 μ A, VDS = 0.1V
0.0
+1.6
ID = 20 μ A, VDS = 0.1V
ID = 40 μ A, VDS = 0.1V
On Drain Current
IDS (ON)
12.0
mA
VGS = +9.9V, VDS = +5V
3.0
VGS = +4.2V, VDS = +5V
Forward Transconductance
GFS
1.4
mmho
VGS = +4.4V
VDS = +9.4V
Transconductance Mismatch
? GFS
1.8
%
Output Conductance
GOS
68
μ mho
VGS = +4.4V
VDS = +9.4V
Drain Source On Resistance
RDS (ON)
500
?
VDS = +0.1V
VGS = +4.4V
Drain Source On Resistance
? RDS (ON)
0.5
%
Mismatch
Drain Source Breakdown
BVDSX
10
V
IDS = 1.0 μ A
Voltage
VGS = -0.6V
Drain Source Leakage Current 1
IDS (OFF)
10
400
pA
VGS = -0.6V, VDS =+5V
V- = -5V
4
nA
TA = 125 ° C
Gate Leakage Current 1
IGSS
3
200
pA
VDS = 0V, VGS = 5V
1
nA
TA =125 ° C
Input Capacitance
Transfer Reverse Capacitance
CISS
CRSS
2.5
0.1
pF
pF
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
ton
toff
10
10
60
ns
ns
dB
V+ = 5V, RL= 5K ?
V+ = 5V, RL= 5K ?
f = 100KHz
Notes:
1
Consists of junction leakage currents
ALD110804/ALD110904
Advanced Linear Devices
2 of 11
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